DocumentCode
3433873
Title
High performance gate drive circuit of high voltage IPMs (HVIPMs)
Author
Kimata, Masahiro ; Chikai, Satoru ; Tanaka, Takeshi ; Ishii, Kazufumi
Author_Institution
Ind. Electron. & Syst. Lab., Mitsubishi Electr. Corp., Japan
Volume
2
fYear
1998
fDate
17-22 May 1998
Firstpage
1196
Abstract
This paper deals with a gate drive circuit of HVIPMs that is suitable for a snubberless inverter system. The proposed gate drive circuit changes the gate resistance in the middle of switching operation to reduce the variation ratio of collector current which causes the surge voltage. The simulation results and experimental results show that the surge voltage can be reduced without considerably increasing the switching loss
Keywords
bridge circuits; driver circuits; insulated gate bipolar transistors; invertors; surge protection; switching circuits; IGBT; collector current variation ratio reduction; gate resistance; half bridge circuit; high performance gate drive circuit; high voltage IPM; snubberless inverter system; surge voltage reduction; switching loss; switching operation; Capacitors; Circuits; Diodes; Equations; Feedback; Insulated gate bipolar transistors; Resistors; Roentgenium; Voltage; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location
Fukuoka
ISSN
0275-9306
Print_ISBN
0-7803-4489-8
Type
conf
DOI
10.1109/PESC.1998.703157
Filename
703157
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