Title :
Characterization of low energy SIMOX (LES) structures
Author :
Namavar, F. ; Cortesi, E. ; Kalkhoran, N.M. ; Manke, J.M. ; Buchanan, B.L.
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
Formation of ultra-thin SOI material using the SIMOX process is addressed. Research has been carried out to determine the effect of total dose, dose step, dose rate, implantation temperature, and energy on the formation of ultra-thin SIMOX material. Attempts were made to determine the lowest energy possible for the implantation of oxygen which results in the formation of high quality, thin SIMOX material. All samples were annealed at 1300°C for 6 h in N2 and analyzed using a variety of techniques, including TEM. The electrical properties of the LES samples were characterized and compared with those of standard SIMOX samples. An empirical curve of voltage breakdown versus oxide thickness for both LES and standard SIMOX samples was developed. The results show the formation of high quality SOI structures by oxygen implantation at 20-80 keV
Keywords :
annealing; elemental semiconductors; integrated circuit technology; ion implantation; semiconductor technology; semiconductor-insulator boundaries; silicon; transmission electron microscope examination of materials; 1300 C; 20 to 80 keV; Si-SiO2; Si:O; annealing; dose rate; dose step; electrical properties; high quality SOI structures; implantation temperature; low energy SIMOX; oxide thickness; total dose; ultra-thin SIMOX; voltage breakdown; Annealing; Crystallization; Dielectric breakdown; Fabrication; Ionizing radiation; Oxygen; Silicon on insulator technology; Standards development; Temperature; Transmission electron microscopy;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145704
