Switching performances comparison of 1200 V punch-through and nonpunch-through IGBTs under hard-switching at high temperature

Author

Azzopardi, S. ; Jamet, C. ; Vinassa, J.-M. ; Zardini, C.

Author_Institution

Lab. I.X.L., Bordeaux I Univ., Talence, France

Volume

2

fYear

1998

fDate

17-22 May 1998

Firstpage

1201

Abstract

Switching performances comparison of 1200 V punch-through (PT) and nonpunch-through (NPT) IGBTs under hard-switching at high temperature has been studied in detail with the aid of extensive measurements at various temperatures, gate resistances and clamping voltages. The test circuit allows the characterisation of the switching losses of the IGBTs under hard-switching independently of those due to the freewheeling diode. We show that these losses are quite similar to each other during turn-on, but more important for PT-IGBT during turn-off. Moreover, NPT-IGBT is less sensitive to temperature and clamping voltage variations than PT-IGBT

Keywords

insulated gate bipolar transistors; losses; power semiconductor switches; switching circuits; 1200 V; clamping voltages; freewheeling diode; gate resistances; hard-switching; high temperature; nonpunch-through IGBT; punch-through IGBT; switching losses; switching performances comparison; test circuit; Circuit testing; Clamps; Diodes; Electrical resistance measurement; Insulated gate bipolar transistors; Performance evaluation; Switching loss; Temperature measurement; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE

Conference_Location

Fukuoka

ISSN

0275-9306

Print_ISBN

0-7803-4489-8

Type

conf

DOI

10.1109/PESC.1998.703158

Filename

703158