Title :
Fast turn characterization of SIMOX wafers
Author :
Liu, S.T. ; Fechner, P.S. ; Roisen, R.L.
Author_Institution :
Honeywell Solid State Electron. Center, Plymouth, MN, USA
Abstract :
Physical and electrical properties of incoming low-defect SIMOX SOI wafers were characterized by fast turn techniques to determine their suitability for device applications. Physical properties were evaluated extensively with optical reflectometry and cross-sectional transmission electron microscopy. To facilitate evaluation of the back channel property with minimal processing. Schottky barrier MOS and simple regular MOS test structures were made. Schottky barrier behavior was noted in the characteristics near the origin and the conduction at zero gate bias. Back channel properties were evaluated first, and then the device was subjected to irradiation using a 10-keV ARACOR/4100 X-ray source with doses in the Mrad (SiO2) region. The threshold voltage shift and the subthreshold voltage swing were measured. The radiation induced interface states in the Mrad (SiO2) region were determined
Keywords :
Schottky effect; X-ray effects; dislocation density; elemental semiconductors; insulated gate field effect transistors; integrated circuit technology; interface electron states; ion implantation; semiconductor-insulator boundaries; silicon; spectrochemical analysis; transmission electron microscope examination of materials; MOS test structures; SIMOX wafers; Schottky barrier MOS; Schottky barrier behavior; Si-SiO2; back channel properties; back channel property; conduction at zero gate bias; cross-sectional transmission electron microscopy; electrical properties; fast turn techniques; optical reflectometry; physical properties; radiation induced interface states; subthreshold voltage swing; threshold voltage shift; Electron optics; Etching; MOSFETs; Optical microscopy; Reflectometry; Schottky barriers; Silicon; Solid state circuits; Testing; Threshold voltage;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145710
