Improved speed and accuracy for optical reflectance profiling of SIMOX wafers

Author

Johnson, E.A. ; Dudkin, A.

Author_Institution

Spire Corp., Bedford, MA, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

69

Lastpage

70

Abstract

An ongoing program to develop manufacturing technology which will improve the availability and reduce the cost of SIMOX wafers is reported. A major thrust of this program is the identification of characterization and measurement techniques for in-process monitoring of SIMOX wafers. An improved method is developed for using optical reflectance to measure oxygen concentration versus depth in as-implanted and as-annealed SIMOX wafers. This method improves the speed of the fitting calculation by more than a factor of 2000 while improving the accuracy by more than an order of magnitude

Keywords

automatic optical inspection; doping profiles; elemental semiconductors; integrated circuit technology; ion implantation; reflectivity; semiconductor-insulator boundaries; silicon; NDE; SIMOX wafers; Si-SiO₂; accuracy; in-process monitoring; measurement techniques; optical reflectance profiling; Absorption; Annealing; Fitting; Manufacturing; Optical films; Optical refraction; Optical variables control; Reflectivity; Slabs; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145713

Filename

145713