Title :
Dopant redistribution and activation in thin film SOI/SIMOX substrates
Author :
Robinson, A.K. ; Bussmann, U. ; Hemment, P.L.F. ; Sharma, V. ; Kilner, J.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Abstract :
Experiments were performed to determine the transport properties, electrical activity, and redistribution of dopants implanted into SIMOX samples with different silicon layer thicknesses. High temperature annealed SIMOX samples with silicon film thicknesses of 2000 Å (SIMOX1) and 3000 Å (SIMOX2) were implanted with As+, Sb+, B+, and P+ ions. Activation of the dopant was achieved by annealing samples at either 950°C or 1150°C in flowing nitrogen gas in a resistivity heated furnace. Temperature dependence of the sheet resistance following As+ ion implantation into the same set of samples is presented. The main difference is seen above 800°C when significant As diffusion occurs, which leads to uniform doping in the silicon layer and a value of sheet resistance which is temperature independent above 1000°C
Keywords :
CMOS integrated circuits; annealing; doping profiles; elemental semiconductors; integrated circuit technology; ion implantation; semiconductor-insulator boundaries; silicon; CMOS devices; Si-SiO2; Si:As; Si:B; Si:P; Si:Sb; annealed SIMOX samples; annealing; dopant activation; electrical activity; ion implantation; redistribution of dopants; sheet resistance; temperature dependence; thin film SOI/SIMOX substrates; transport properties; Annealing; Conductivity; Doping; Furnaces; Ion implantation; Nitrogen; Semiconductor films; Silicon; Temperature dependence; Transistors;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145714
