Title :
Silicon millimeter-wave technologies and circuits
Author :
Long, John R. ; Zhao, Y. ; Chan, W.L. ; Kwok, K.-C. ; Jin, Y. ; Zhao, Dongbin
Author_Institution :
Electron. Res. Lab./DIMES, Delft Univ. of Technol., Delft, Netherlands
Abstract :
Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequencies, with advantages in design complexity, functionality and cost compared to III-Vs. The potential for application of deep submicron SiGe-BiCMOS and CMOS-SOI technologies in mm-wave systems is surveyed in this paper. Progress in mm-wave silicon IC development for Gbit/s data rate wireless communication is highlighted with emphasis on recently reported innovations and developments from the authors´ own work.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; millimetre wave integrated circuits; silicon-on-insulator; BiCMOS; CMOS-SOI; SiGe; millimeter-wave technologies; CMOS technology; Cost function; Frequency; III-V semiconductor materials; Millimeter wave communication; Millimeter wave integrated circuits; Millimeter wave technology; Silicon; Technological innovation; Wireless communication;
Conference_Titel :
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4244-5090-9
DOI :
10.1109/ICECS.2009.5410816
