• DocumentCode
    3434227
  • Title

    Interdiffusion of GaInNAs-GaAs quantum wells

  • Author

    Chan, Michael C Y ; Surya, C. ; Wai, P.K.A.

  • Author_Institution
    Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., China
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    The optical gain spectra for interdiffused GaxIn1-xN0.04As0.96-GaAs single quantum wells are studied theoretically using Fick´s law and the Fermi golden rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. The results show that the interdiffusion technique can be used to tune the operating wavelength for multi-wavelength laser diode applications without degradation of device performance
  • Keywords
    III-V semiconductors; chemical interdiffusion; gallium arsenide; indium compounds; laser tuning; quantum well lasers; semiconductor quantum wells; Fermi golden rule; Fick´s law; GaInN0.04As0.96-GaAs; GaInNAs-GaAs quantum wells; device performance; diffusion length; gain peak shift; interdiffused GaxIn1-xN0.04As 0.96-GaAs single quantum wells; interdiffusion; interdiffusion technique; multi-wavelength laser diode applications; operating wavelength tuning; optical gain spectra; peak gain; quantum well interdiffusion; Atom optics; Atomic layer deposition; Diode lasers; Gallium arsenide; Laser tuning; Lattices; Optical devices; Rapid thermal processing; Stimulated emission; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong
  • Conference_Location
    Hong Kong
  • Print_ISBN
    0-7803-6714-6
  • Type

    conf

  • DOI
    10.1109/HKEDM.2001.946909
  • Filename
    946909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3434227