Title :
Metal bit-line common contact integration technology in 0.17 μm-DRAM and merged DRAM in logic devices
Author :
Choi, Siyoung ; Yoo, Bong-Young ; Kim, Jae-Hak ; Choi, Seung-Man ; Lee, Hyeon-Deok ; Kang, Ho-Kyu ; Park, Yong-Jik ; Park, Jong-Woo ; Lee, Moon-Yong
Author_Institution :
Process Dev. Team, Samsung Electron. Co. Ltd., Yongin-City, South Korea
Abstract :
The metal bit-line common contact (MBCC) process has been successfully integrated in 0.17 μm DRAM and in merged DRAM in logic devices. By introducing in-situ i-PVD Ti-TiN on W-plug MBCC, reliable electrical performance, P+ Rc<1000 Ω/cnt and N+ Rc<500 Ω/cnt without leakage, and process stability are achieved after thermal treatment at 750°C for 100 min
Keywords :
DRAM chips; chemical interdiffusion; diffusion barriers; heat treatment; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated logic circuits; stability; tungsten; 0.17 micron; 100 min; 750 C; DRAM; MBCC process; W-TiN-Ti; W-plug MBCC; in-situ i-PVD Ti-TiN; logic devices; merged DRAM; metal bit-line common contact integration technology; metal bit-line common contact process; process stability; reliable electrical performance; thermal treatment; Capacitors; Collimators; Contacts; Logic devices; Plugs; Random access memory; Silicidation; Thermal degradation; Thermal stability; Tin;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787101
