DocumentCode
3434275
Title
A CMOS Low Voltage Charge Pump
Author
Bhalerao, Shantanu A. ; Chaudhary, Abhishek V. ; Patrikar, Rajendra M.
Author_Institution
Visvesvaraya Nat. Inst. of Technol., Nagpur
fYear
2007
fDate
6-10 Jan. 2007
Firstpage
941
Lastpage
946
Abstract
Charge pump circuits are used for obtaining higher voltages than normal power supply voltage in flash memories, DRAMs and low voltage designs. In this paper, we present a charge pump circuit in standard CMOS technology that is suited for low voltage operation. Our proposed charge pump uses a cross- connected NMOS cell as the basic element and PMOS switches are employed to connect one stage to the next. The simulated output voltages of the proposed 4 stage charge pump for input voltage of 0.9 V, 1.2 V, 1.5 V, 1.8 V and 2.1 V are 3.9 V, 5.1 V, 6.35 V, 7.51 V and 8.4 V respectively. This proposed charge pump is suitable for low power CMOS mixed-mode designs.
Keywords
CMOS integrated circuits; power supply circuits; CMOS technology; DRAMs; PMOS switches; charge pump circuits; cross-connected NMOS cell; flash memories; low voltage charge pump; power supply voltage; voltage 0.9 V; voltage 1.2 V; voltage 1.5 V; voltage 1.8 V; voltage 2.1 V; voltage 3.9 V; voltage 5.1 V; voltage 6.35 V; voltage 7.51 V; voltage 8.4 V; CMOS technology; Capacitors; Charge pumps; Circuits; Clocks; Diodes; Low voltage; MOS devices; Power supplies; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2007. Held jointly with 6th International Conference on Embedded Systems., 20th International Conference on
Conference_Location
Bangalore
ISSN
1063-9667
Print_ISBN
0-7695-2762-0
Type
conf
DOI
10.1109/VLSID.2007.9
Filename
4092161
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