• DocumentCode
    3434275
  • Title

    A CMOS Low Voltage Charge Pump

  • Author

    Bhalerao, Shantanu A. ; Chaudhary, Abhishek V. ; Patrikar, Rajendra M.

  • Author_Institution
    Visvesvaraya Nat. Inst. of Technol., Nagpur
  • fYear
    2007
  • fDate
    6-10 Jan. 2007
  • Firstpage
    941
  • Lastpage
    946
  • Abstract
    Charge pump circuits are used for obtaining higher voltages than normal power supply voltage in flash memories, DRAMs and low voltage designs. In this paper, we present a charge pump circuit in standard CMOS technology that is suited for low voltage operation. Our proposed charge pump uses a cross- connected NMOS cell as the basic element and PMOS switches are employed to connect one stage to the next. The simulated output voltages of the proposed 4 stage charge pump for input voltage of 0.9 V, 1.2 V, 1.5 V, 1.8 V and 2.1 V are 3.9 V, 5.1 V, 6.35 V, 7.51 V and 8.4 V respectively. This proposed charge pump is suitable for low power CMOS mixed-mode designs.
  • Keywords
    CMOS integrated circuits; power supply circuits; CMOS technology; DRAMs; PMOS switches; charge pump circuits; cross-connected NMOS cell; flash memories; low voltage charge pump; power supply voltage; voltage 0.9 V; voltage 1.2 V; voltage 1.5 V; voltage 1.8 V; voltage 2.1 V; voltage 3.9 V; voltage 5.1 V; voltage 6.35 V; voltage 7.51 V; voltage 8.4 V; CMOS technology; Capacitors; Charge pumps; Circuits; Clocks; Diodes; Low voltage; MOS devices; Power supplies; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, 2007. Held jointly with 6th International Conference on Embedded Systems., 20th International Conference on
  • Conference_Location
    Bangalore
  • ISSN
    1063-9667
  • Print_ISBN
    0-7695-2762-0
  • Type

    conf

  • DOI
    10.1109/VLSID.2007.9
  • Filename
    4092161