Title :
A drain current model for MOSFET´s with pocket implantation
Author :
Chang, Yallg-Hua ; Ho, Ching-suag ; Liao, Wen-Tui ; Liu, Chung-Che
Author_Institution :
Nat. Yunlin Univ. of Sci. & Technol., Taiwan
Abstract :
A physics-based drain current model with short-channel effect and reverse short-channel effect in pocket-implanted MOSFETs has been developed. The model is able to predict the effect of the pocket implant on threshold voltage and drain current in linear and saturated regions. The validity of the model has been verified by measurement and simulation. This result is beneficial to optimization of implant dosage during processing
Keywords :
MOSFET; doping profiles; electric current; ion implantation; optimisation; semiconductor device measurement; semiconductor device models; MOSFET; drain current; drain current model; implant dosage optimization; linear region; measurement; model validity; physics-based drain current model; pocket implant effect; pocket implantation; pocket-implanted MOSFETs; reverse short-channel effect; saturated region; short-channel effect; simulation; threshold voltage; Doping; Implants; MOSFET circuits; Neodymium; Semiconductor process modeling; Solid modeling; Testing; Threshold voltage; Virtual manufacturing;
Conference_Titel :
Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6714-6
DOI :
10.1109/HKEDM.2001.946914
