DocumentCode :
34345
Title :
A MOS Parametric Integrator With Improved Linearity for SC 
Modulators
Author :
Hoda Seyedhosseinzadeh, B. ; Nabavi, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tarbiat Modares Univ., Tehran, Iran
Volume :
62
Issue :
3
fYear :
2015
fDate :
Mar-15
Firstpage :
231
Lastpage :
235
Abstract :
This brief presents a double complimentary metal- oxide-semiconductor (MOS) parametric integrator (DCMPI) with improved linearity characteristics for wideband switched-capacitor sigma-delta (ΣΔ) modulators. Compared with the MOS parametric integrator [1], the proposed circuit achieves similar power, noise, and speed performance, while its linearity characteristics and transfer function are improved. The main nonideality improvements in the proposed DCMPI are presented through the mathematical formulas and verified through the postlayout simulations performed in the Spectre/Cadence electrical simulator using the BSIM3v3 complementary MOS (CMOS) model in the standard 0.18-μm CMOS process.
Keywords :
CMOS analogue integrated circuits; integrating circuits; sigma-delta modulation; switched capacitor networks; BSIM3v3 complementary MOS; CMOS model; DCMPI; MOS parametric integrator; SC sigma-delta modulators; Spectre/Cadence electrical simulator; double complimentary metal- oxide-semiconductor; size 0.18 mum; wideband switched-capacitor sigma-delta modulators; Capacitors; Linearity; Modulation; Noise; Semiconductor device modeling; Transfer functions; Transistors; Low distortion; MOS parametric integrator; MOS parametric integrator (MPI); low distortion; switched-capacitor (SC) circuits; switched-capacitor circuits;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2014.2368971
Filename :
6951403
Link To Document :
