DocumentCode
34345
Title
A MOS Parametric Integrator With Improved Linearity for SC 
Modulators
Author
Hoda Seyedhosseinzadeh, B. ; Nabavi, A.
Author_Institution
Dept. of Electr. & Comput. Eng., Tarbiat Modares Univ., Tehran, Iran
Volume
62
Issue
3
fYear
2015
fDate
Mar-15
Firstpage
231
Lastpage
235
Abstract
This brief presents a double complimentary metal- oxide-semiconductor (MOS) parametric integrator (DCMPI) with improved linearity characteristics for wideband switched-capacitor sigma-delta (ΣΔ) modulators. Compared with the MOS parametric integrator [1], the proposed circuit achieves similar power, noise, and speed performance, while its linearity characteristics and transfer function are improved. The main nonideality improvements in the proposed DCMPI are presented through the mathematical formulas and verified through the postlayout simulations performed in the Spectre/Cadence electrical simulator using the BSIM3v3 complementary MOS (CMOS) model in the standard 0.18-μm CMOS process.
Keywords
CMOS analogue integrated circuits; integrating circuits; sigma-delta modulation; switched capacitor networks; BSIM3v3 complementary MOS; CMOS model; DCMPI; MOS parametric integrator; SC sigma-delta modulators; Spectre/Cadence electrical simulator; double complimentary metal- oxide-semiconductor; size 0.18 mum; wideband switched-capacitor sigma-delta modulators; Capacitors; Linearity; Modulation; Noise; Semiconductor device modeling; Transfer functions; Transistors; Low distortion; MOS parametric integrator; MOS parametric integrator (MPI); low distortion; switched-capacitor (SC) circuits; switched-capacitor circuits;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2014.2368971
Filename
6951403
Link To Document