Spreading-resistance temperature sensor on thin-film SOI

Author

Li, Bin ; Lai, P.T. ; Sin, J.K.O.

Author_Institution

Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou, China

fYear

2001

fDate

2001

Firstpage

75

Lastpage

78

Abstract

A spreading-resistance temperature (SRT) sensor on thin-film SOI is investigated with emphasis on its resistance versus temperature (R-T) characteristics. The effect of Si-film thickness on the maximum operating temperature (T_max) is simulated and verified by experimental results. The thin-film SOI SRT sensor not only achieves promising device characteristics, but also shows that its bias current can be as low as 1 μA, which is 1,000 times lower than that of bulk Si SRT sensors. Therefore, SRT sensors on thin-film SOI can cover a wide scope of low-power applications

Keywords

electric resistance; electric sensing devices; low-power electronics; semiconductor device measurement; semiconductor device models; silicon-on-insulator; temperature sensors; 1 muA; R-T characteristics; SRT sensor; Si-film thickness; TFSOI SRT sensors; bias current; bulk Si SRT sensors; device characteristics; low-power applications; maximum operating temperature; resistance versus temperature characteristics; spreading-resistance temperature sensor; thin-film SOI; thin-film SOI SRT sensor; Doping; Physics; Semiconductor films; Semiconductor thin films; Sensor phenomena and characterization; Silicon; Substrates; Temperature sensors; Thick film sensors; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6714-6

Type

conf

DOI

10.1109/HKEDM.2001.946922

Filename

946922