Title :
Impact ionization at low drain voltages in SOI FETs
Author :
McKitterick, J.B.
Author_Institution :
Allied-Signal Aerosp. Technol. Center, Columbia, MD, USA
Abstract :
It is universally assumed that impact ionization has no noticeable effects in FETs at low drain voltages, e.g. 0.1 volts. It is pointed out that in SOI FETs without a body contact the effects of impact ionization, though somewhat subtle, are significant. Proper inclusion of impact ionization effects in modeling does not appear to affect the gross characteristics of the device, yet it has a profound impact on the correct interpretation of such derived quantities as lifetime
Keywords :
impact ionisation; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; NMOSFET; SOI FET; Si-SiO2; impact ionization effects; lifetime; low drain voltages; modeling; Charge carrier processes; FETs; Impact ionization; Low voltage; MOS devices; Spontaneous emission; Steady-state;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145734
