• DocumentCode
    3434540
  • Title

    Impact ionization at low drain voltages in SOI FETs

  • Author

    McKitterick, J.B.

  • Author_Institution
    Allied-Signal Aerosp. Technol. Center, Columbia, MD, USA
  • fYear
    1990
  • fDate
    2-4 Oct 1990
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    It is universally assumed that impact ionization has no noticeable effects in FETs at low drain voltages, e.g. 0.1 volts. It is pointed out that in SOI FETs without a body contact the effects of impact ionization, though somewhat subtle, are significant. Proper inclusion of impact ionization effects in modeling does not appear to affect the gross characteristics of the device, yet it has a profound impact on the correct interpretation of such derived quantities as lifetime
  • Keywords
    impact ionisation; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; NMOSFET; SOI FET; Si-SiO2; impact ionization effects; lifetime; low drain voltages; modeling; Charge carrier processes; FETs; Impact ionization; Low voltage; MOS devices; Spontaneous emission; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Conference, 1990., 1990 IEEE
  • Conference_Location
    Key West, FL
  • Print_ISBN
    0-87942-573-3
  • Type

    conf

  • DOI
    10.1109/SOSSOI.1990.145734
  • Filename
    145734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3434540