Bipolar transistors in silicon-on-sapphire (SOS): effects of nanosecond thermal processing

Author

Russell, S.D. ; Offord, B.W. ; Weiner, Kurt H.

Author_Institution

US Naval Ocean Syst. Center, San Diego, CA, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

115

Lastpage

116

Abstract

Nanosecond thermal processing (NTP) using a XeCl excimer laser was employed in the fabrication of npn bipolar transistors in silicon-on-sapphire (SOS). Functional devices, with current gain approach 100, were obtained. The deleterious effects of diffusion pipes in SOS material were minimized using rapid laser activation of ion implanted dopant. Devices were fabricated using n-type epitaxially deposited silicon on double-solid-phase-epitaxy (DSPE) improved SOS. The total thickness of the first and second silicon epi-layers was nominally 2.0 μm. Devices were fabricated using three different laser fluences for the emitter anneal. This corresponds to a variation in melt duration and corresponding metallurgical junction depth

Keywords

bipolar transistors; laser beam annealing; semiconductor epitaxial layers; semiconductor-insulator boundaries; silicon; 2.0 micron; SOS technology; Si on sapphire; Si-Al₂O₃; current gain; diffusion pipes; epitaxially deposited; ion implanted dopant; melt duration; metallurgical junction depth; n-type; nanosecond thermal processing; npn bipolar transistors; rapid laser activation; Annealing; Bipolar transistors; Crystalline materials; Crystallography; Gas lasers; Laboratories; Optical device fabrication; Optical materials; Silicon; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145736

Filename

145736