Title :
The effect of nickel seed position on nickel-induced-lateral-crystallization of amorphous silicon
Author :
Cheng, C.F. ; Leung, T.C. ; Poon, M.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
Nickel-induced-lateral-crystallization (NILC) is highly considered as a low temperature alternative method for solid phase crystallization (SPC). It can be used for high performance thin film transistor (TFT) fabrication. In this paper, TFTs were fabricated (i) beside the Ni seed-line windows, and (ii) at the end side region of the Ni windows. Thus, the effect of Ni seed position on NILC was studied. It was found that TFTs fabricated at the end side of the Ni seed-line could provide relatively better performance, including higher mobility, lower threshold voltage, better subthreshold swing and larger maximum on/off ratio
Keywords :
amorphous semiconductors; annealing; carrier mobility; crystallisation; elemental semiconductors; nickel; silicon; solid-state phase transformations; thin film transistors; NILC; Ni; Ni seed position effects; Ni seed-line; Ni seed-line window end side region; Ni seed-line windows; Si; TFT fabrication; TFTs; amorphous silicon; carrier mobility; maximum on/off ratio; nickel seed position; nickel-induced-lateral-crystallization; solid phase crystallization; subthreshold swing; thin film transistor fabrication; threshold voltage; Amorphous silicon; Annealing; Crystallization; Fabrication; Nickel; Oxidation; Performance analysis; Sputtering; Temperature; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6714-6
DOI :
10.1109/HKEDM.2001.946927
