The effect of nickel seed position on nickel-induced-lateral-crystallization of amorphous silicon

Author

Cheng, C.F. ; Leung, T.C. ; Poon, M.C.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

fYear

2001

fDate

2001

Firstpage

97

Lastpage

100

Abstract

Nickel-induced-lateral-crystallization (NILC) is highly considered as a low temperature alternative method for solid phase crystallization (SPC). It can be used for high performance thin film transistor (TFT) fabrication. In this paper, TFTs were fabricated (i) beside the Ni seed-line windows, and (ii) at the end side region of the Ni windows. Thus, the effect of Ni seed position on NILC was studied. It was found that TFTs fabricated at the end side of the Ni seed-line could provide relatively better performance, including higher mobility, lower threshold voltage, better subthreshold swing and larger maximum on/off ratio

Keywords

amorphous semiconductors; annealing; carrier mobility; crystallisation; elemental semiconductors; nickel; silicon; solid-state phase transformations; thin film transistors; NILC; Ni; Ni seed position effects; Ni seed-line; Ni seed-line window end side region; Ni seed-line windows; Si; TFT fabrication; TFTs; amorphous silicon; carrier mobility; maximum on/off ratio; nickel seed position; nickel-induced-lateral-crystallization; solid phase crystallization; subthreshold swing; thin film transistor fabrication; threshold voltage; Amorphous silicon; Annealing; Crystallization; Fabrication; Nickel; Oxidation; Performance analysis; Sputtering; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6714-6

Type

conf

DOI

10.1109/HKEDM.2001.946927

Filename

946927