DocumentCode :
3434611
Title :
Uncovering circuit reliability effects using dedicated on-chip monitors
Author :
Kim, Chris H.
Author_Institution :
Department of Electrical and Computing Engineering, University of Minnesota - Twin Cities
fYear :
2012
fDate :
14-18 Oct. 2012
Firstpage :
29
Lastpage :
29
Abstract :
Summary form only given. Device aging mechanisms such as Negative Bias Temperature Instability (NBTI), Hot Carrier Injection (HCI) and Time Dependent Dielectric Breakdown (TDDB) have emerged as serious problems undermining the long term reliability of high performance systems. In this presentation, we will review a number of unique test chip designs pursued by circuit designers that demonstrate the benefits of utilizing on-chip logic and a simple test interface to automate circuit aging experiments. This new class of compact on-chip sensors, called “silicon odometers”, can reveal important aspects of circuit aging that would otherwise be impossible to measure, and can lead us down the path to realtime aging compensation in future processors.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4673-2749-7
Type :
conf
DOI :
10.1109/IIRW.2012.6468911
Filename :
6468911
Link To Document :
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