Negative differential capacitance in copper phthalocyanine organic devices

Author

Xu, M.A. ; Xu, J.B. ; Cheung, W.Y.

Author_Institution

Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China

fYear

2001

fDate

2001

Firstpage

122

Lastpage

125

Abstract

A remarkable dependence of negative differential capacitance (NDC) on bias voltage, frequency and temperature has been found in n-Si/copper phthalocyanine (CuPc)/Au devices. Annealing and thickness effects of CuPc thin films on NDC behavior were investigated. This NDC behavior is attributed to the charging-discharging current and inertial conducting current mode related to the localized states

Keywords

annealing; capacitance; copper compounds; electric current; localised states; molecular electronics; organic semiconductors; semiconductor device testing; semiconductor diodes; semiconductor thin films; Au; CuPc thin films; NDC behavior; Si; annealing; bias voltage; charging-discharging current; copper phthalocyanine organic devices; film thickness effects; inertial conducting current mode; localized states; n-Si/CuPc/Au devices; n-Si/CuPc/Au diodes; n-Si/copper phthalocyanine/Au devices; negative differential capacitance; operating frequency; operating temperature; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Copper; Frequency; Gold; Organic light emitting diodes; Semiconductor thin films; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6714-6

Type

conf

DOI

10.1109/HKEDM.2001.946932

Filename

946932