Significant improvement in characteristics of SOS/MOSFETs by CW-Ar laser-recrystallization

Author

Sukegawa, K. ; Matsuoka, H. ; Sasaki, T. ; Park, K.H. ; Kawamura, S. ; Nakano, M.

Author_Institution

Fujitsu Ltd., Kawasaki, Japan

fYear

1990

fDate

2-4 Oct 1990

Firstpage

134

Lastpage

135

Abstract

Generally in SOS (silicon on sapphire) films, the density of Si defects such as twins and stacking faults is quite high, especially near the Si/sapphire interface, mainly due to the lattice mismatch between Si and sapphire. This leads to inferior electrical properties compared to their bulk counterparts. Although it has been reported that the characteristics of SOS devices can be improved by a pulse laser irradiation, the quality of laser-irradiated SOS films has not been investigated in detail. It is demonstrated that the SOS films have been significantly improved by CW-Ar laser recrystallization, resulting in almost defect-free SOS films. The defect-free SOS films reduce back-channel leakage currents in both n- and p-MOSFETs, while at the same time improving carrier mobilities by 30-50%

Keywords

insulated gate field effect transistors; laser beam annealing; recrystallisation; semiconductor-insulator boundaries; silicon; CW-Ar laser-recrystallization; MOSFETs; SOS films; Si-Al₂O₃; back-channel leakage currents; carrier mobilities; characteristics; defects; electrical properties; lattice mismatch; pulse laser irradiation; stacking faults; twins; Crystallization; Lattices; Leakage current; MOSFET circuits; Optical pulses; Scattering; Semiconductor films; Substrates; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145747

Filename

145747