Title :
On the correlation between NBTI, SILC, and flicker noise
Author :
Wagner, P.-J. ; Kaczer, Ben ; Scholten, A. ; Reisinger, H. ; Bychikhin, S. ; Pogany, Dionyz ; Vandamme, L.K.J. ; Grasser, Tibor
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
Negative Bias Temperature Instability (NBTI) is suspected to be linked to various other MOSFET phenomena. We report measurements of increased drain current noise, increased gate leakage current, and decreased recoverable threshold voltage shift after multiple cycles of negative bias temperature stress and relaxation for three different technologies. We also find that stress conditions have to be carefully selected, otherwise oxide breakdown will be erroneously interpreted as a correlation between NBTI, noise and gate leakage. Finally, the implications of our findings on the modelling of oxide defects are highlighted.
Keywords :
MOSFET; flicker noise; leakage currents; negative bias temperature instability; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; semiconductor device noise; MOSFET; NBTI; SILC; drain current noise; flicker noise; gate leakage current; negative bias temperature instability; oxide breakdown; oxide defects modelling; recoverable threshold voltage shift; stress conditions; stress-induced leakage current; Correlation; Current measurement; Logic gates; Noise; Noise measurement; Reliability; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4673-2749-7
DOI :
10.1109/IIRW.2012.6468921