Direct electrical characterization of metal-induced-lateral-crystallization regions by spreading resistance probe measurements

Author

Leung, T.C. ; Cheng, C.F. ; Myasnikov, A.M. ; Poon, M.C.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

fYear

2001

fDate

2001

Firstpage

144

Lastpage

147

Abstract

Spreading resistance probe (SRP) measurements have been used to directly study the electrical characteristics of MILC polysilicon films. The measurements require only small regions (~100 μm×100 μm) and the results have shown an improvement of the quality of resistance after a low temperature (625°C) and short time (1 hour) annealing. The new method can provide a fast, simple and inexpensive electrical characterization method instead of fabrication of devices such as resistor and transistors

Keywords

annealing; crystallisation; electric resistance measurement; elemental semiconductors; probes; semiconductor thin films; silicon; 1 hr; 100 micron; 625 C; MILC polysilicon films; SRP measurements; Si; direct electrical characterization; electrical characteristics; inexpensive electrical characterization method; low temperature annealing; metal-induced-lateral-crystallization regions; resistance quality; resistor fabrication; spreading resistance probe measurements; transistor fabrication; Annealing; Electric resistance; Electric variables; Electric variables measurement; Electrical resistance measurement; Fabrication; Probes; Resistors; Temperature; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6714-6

Type

conf

DOI

10.1109/HKEDM.2001.946936

Filename

946936