Title :
Direct electrical characterization of metal-induced-lateral-crystallization regions by spreading resistance probe measurements
Author :
Leung, T.C. ; Cheng, C.F. ; Myasnikov, A.M. ; Poon, M.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
Spreading resistance probe (SRP) measurements have been used to directly study the electrical characteristics of MILC polysilicon films. The measurements require only small regions (~100 μm×100 μm) and the results have shown an improvement of the quality of resistance after a low temperature (625°C) and short time (1 hour) annealing. The new method can provide a fast, simple and inexpensive electrical characterization method instead of fabrication of devices such as resistor and transistors
Keywords :
annealing; crystallisation; electric resistance measurement; elemental semiconductors; probes; semiconductor thin films; silicon; 1 hr; 100 micron; 625 C; MILC polysilicon films; SRP measurements; Si; direct electrical characterization; electrical characteristics; inexpensive electrical characterization method; low temperature annealing; metal-induced-lateral-crystallization regions; resistance quality; resistor fabrication; spreading resistance probe measurements; transistor fabrication; Annealing; Electric resistance; Electric variables; Electric variables measurement; Electrical resistance measurement; Fabrication; Probes; Resistors; Temperature; Time measurement;
Conference_Titel :
Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6714-6
DOI :
10.1109/HKEDM.2001.946936
