Title :
New insights into NBTI reliability in UTBOX-FDSOI PMOS transistors
Author :
Angot, D. ; Rideau, D. ; Bravaix, A. ; Monsieur, F. ; Randriamihaja, Y. Mamy ; Huard, Vincent
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Based on capacitive measurements combined with TCAD simulations, in a wide range of bulk biases, the impact of NBTI on both oxide-silicon interfaces of FDSOI transistors is evaluated. Physical modeling is proposed to fully analyze the degradation mechanisms and reproduce the experimental behaviors through the help of accurate simulations of the back bias dependence in the FDSOI structure.
Keywords :
MOSFET; capacitance measurement; electronic engineering computing; semiconductor device reliability; silicon-on-insulator; technology CAD (electronics); FDSOI structure; NBTI reliability; Si; TCAD simulations; UTBOX-FDSOI PMOS transistors; back bias dependence; bulk biases; capacitive measurements; degradation mechanisms; oxide-silicon interfaces; physical modeling; ultra thin buried oxide; Degradation; Electrostatics; Integrated circuit reliability; Logic gates; Performance evaluation; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4673-2749-7
DOI :
10.1109/IIRW.2012.6468923
