DocumentCode
343503
Title
A yield management strategy for semiconductor manufacturing based on information theory
Author
Weber, Charles ; Sankaran, Vijay ; Tobin, Kenneth W., Jr. ; Scher, Gary
Author_Institution
Sloan Sch. of Manage., MIT, Cambridge, MA, USA
fYear
1999
fDate
36373
Firstpage
533
Abstract
A model based on information theory, which allows technology managers to choose the optimal strategies for yield management in the semiconductor industry, is presented. The knowledge extraction rate per experimentation cycle and knowledge extraction rate per unit time serve as benchmarking metrics for yield learning. They enable managers to make objective comparisons of apparently unrelated technologies. Combinations of four yield analysis tools-electrical testing, automatic defect classification, spatial signature analysis and wafer position analysis-are examined in detail to determine an optimal yield management strategy for both the R&D and volume production environments
Keywords
electronic engineering computing; integrated circuit testing; integrated circuit yield; knowledge acquisition; management; R&D environment; automatic defect classification; benchmarking metrics; electrical testing; experimentation cycle; information theory; integrated circuits; knowledge extraction rate; optimal yield management strategy; semiconductor industry; semiconductor manufacturing; spatial signature analysis; technology management; technology managers; unrelated technologies objective comparisons; volume production environment; wafer position analysis; yield learning; yield management strategy; Automatic testing; Benchmark testing; Data mining; Electronics industry; Environmental management; Information theory; Integrated circuit yield; Research and development management; Semiconductor device manufacture; Technology management;
fLanguage
English
Publisher
ieee
Conference_Titel
Management of Engineering and Technology, 1999. Technology and Innovation Management. PICMET '99. Portland International Conference on
Conference_Location
Portland, OR
Print_ISBN
1-890843-02-4
Type
conf
DOI
10.1109/PICMET.1999.787852
Filename
787852
Link To Document