Title :
Influence of γ irradiation on ESR active defects in SIMOX structures
Author :
Stesmans, A. ; Revesz, A.G. ; Hughes, H.L.
Author_Institution :
Dept. of Phys., Leuven Univ., Belgium
Abstract :
Silicon-on-insulator (SOI) structures formed on (001) Si wafers by single-step O+ implantation were studied by low temperature electron spin resonance (ESR). The spectrum exhibits a strong isotropic line of g=2.0059 with spin density Ns=7.1×1013 cm-2, originating from Si dangling bonds (DBs) in a-Si regions. γ irradiation to a dose of 1 Mrad (Si) enhances this signal by a factor of 2.5 and generates a new anisotropic line of Ns=1.1×1012 cm-2 and g=1.99989±0.00004 for magnetic induction parallel to [001]. The latter is assigned to an intrinsic double donor which, rather than being physically generated by irradiation, is ESR activated by changing its ionization state through Si band bending tuning by modification of charge in the buried oxide
Keywords :
dangling bonds; gamma-ray effects; paramagnetic resonance of defects; semiconductor-insulator boundaries; γ irradiation; 1000000 rad; ESR active defects; SIMOX structures; SOI; Si band bending; Si dangling bonds; Si wafers; Si-SiO2; buried oxide; intrinsic double donor; ionization state; single-step O+ implantation; spin density; strong isotropic line; Anisotropic magnetoresistance; Annealing; Capacitive sensors; Density measurement; Fabrication; Measurement standards; Paramagnetic resonance; Powders; Signal analysis; Wet etching;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145762
