Direct experimental evidence for a dominant hole trapping center in SIMOX oxides

Author

Conley, John F. ; Lenahan, P.M. ; Roitman, P.

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

164

Lastpage

165

Abstract

Experimental evidence is presented that indicates that E´ centers or E´-like centers play an important role in hole trapping in SIMOX (separation by implantation of oxygen) oxides. The E´ center is a silicon atom back-bonded to three oxygen atoms; in thermally grown SiO₂ films on silicon it is the dominant deep hole trap and is almost certainly a hole trapped in an oxygen vacancy. The SIMOX samples used had buried oxides approximately 4000 Å thick. The trapping was explored using a combination of electron paramagnetic resonance (EPR) and vacuum ultraviolet (hc/λ=10.2 eV) and ultraviolet (hc/λ=5 eV) irradiation sequences

Keywords

deep levels; hole traps; insulating thin films; paramagnetic resonance of defects; semiconductor-insulator boundaries; silicon compounds; 4000 Å; E´ centers; EPR; O vacancy; SIMOX oxides; SiO₂-Si; buried oxides; deep hole trap; dominant hole trapping center; separation by implantation of oxygen; ultraviolet irradiation; vacuum ultraviolet irradiation; Capacitance; Corona; Electron traps; Kelvin; Paramagnetic materials; Paramagnetic resonance; Probes; Signal generators; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145763

Filename

145763