Title :
Degradation of GaN high-electron mobility transistors in voltage step stress
Author :
Xinhua Wang ; Lei Pang ; Jianhui Wang ; Tingting Yuan ; Weijun Luo ; Xiaojuan Chen ; Xinyu Liu
Author_Institution :
Key Lab. of Microelectron. Device & Integrated Technol., Inst. of Microelectron., Beijing, China
Abstract :
Voltage step-stress tests on GaN-on-SiC HEMT showed that electric field is a driving factor for degradation. The position of localized damage is corresponding to the high electric field region. A degradation mode different from previous reports is observed, which led to an increase of drain current after stress in certain conditions. We attribute this to the collection of the positive mobile charge under the gate during the stress.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; silicon compounds; stress analysis; wide band gap semiconductors; GaN; SiC; high electric field region; high-electron mobility transistor degradation; localized damage position; positive mobile charge; voltage step-stress tests; Degradation; Electric fields; Gallium nitride; HEMTs; Logic gates; Reliability; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4673-2749-7
DOI :
10.1109/IIRW.2012.6468935
