Title :
1990 IEEE SOS/SOI Technology Conference. (Cat. No.90CH2891-0)
Abstract :
The following topics are dealt with: silicon-on-insulator (SOI) MOSFET modeling and physics; device characterization; oxygen-implanted SOI material (SIMOX); materials characterization and fabrication; device processing; and novel devices and circuits, including HV double-diffusion MOS power FETs, SOI-implemented optical modulators, CMOS/SOS LSI radiation-hard processors, and polysilicon thin-film transistors with field-plate-induced drain junctions
Keywords :
elemental semiconductors; integrated circuit technology; semiconductor technology; semiconductor-insulator boundaries; silicon; CMOS/SOS LSI radiation-hard processors; HV double-diffusion MOS power FET; MOSFET modeling; SIMOX; SOI; SOI-implemented optical modulators; SOS; Si-Al/sub 2/O/sub 3/; Si-SiO/sub 2/; device characterization; device processing; fabrication; field-plate-induced drain junctions; materials characterization; polysilicon thin-film transistors;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL, USA
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145771
