DocumentCode :
3435325
Title :
Frequency dependent charge pumping — A defect depth profiling tool?
Author :
Ryan, J.T. ; Southwick, Richard G. ; Campbell, J.P. ; Cheung, K.P. ; Suehle, John S.
Author_Institution :
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
2012
fDate :
14-18 Oct. 2012
Firstpage :
147
Lastpage :
150
Abstract :
We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than its actual physical depth, and (2) only a fraction of detrapping charge may contribute to the CP current (ICP) resulting in analysis errors. Thus, the relationship between frequency and defect depth is much more complex than what has been previously reported.
Keywords :
carrier lifetime; high-k dielectric thin films; tunnelling; CP current; FD-CP; bulk defect depth distributions; defect depth profiling tool; detrapping charge fraction; effective tunneling length; frequency dependent charge pumping; Charge pumps; Dielectrics; Hafnium compounds; Iterative closest point algorithm; Logic gates; Reliability; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4673-2749-7
Type :
conf
DOI :
10.1109/IIRW.2012.6468942
Filename :
6468942
Link To Document :
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