Discussion on the performances of hybrid SET-MOSFET Voltage Controlled Oscillators

Author

Xuan, Wei ; Calmon, Francis ; Baboux, Nicolas ; Souifi, Abdelkader

Author_Institution

Lyon Inst. of Nanotechnol., Univ. of Lyon - INSA Lyon, Villeurbanne, France

fYear

2009

fDate

13-16 Dec. 2009

Firstpage

479

Lastpage

482

Abstract

This article firstly, presents an analytical static model of single electron transistor (SET) based on the orthodox theory and enhanced to take into account the influence of temperature (thermionic current). Comparisons with the SIMON simulator and measurements show that our model is correct and accurate. Using this model, we analysed the performances of voltage controlled oscillators (VCO) based on two hybrid SET-MOSFET architectures. In particular we compared the VCO performances with ideal and realistic SETs for different CMOS technology nodes.

Keywords

CMOS integrated circuits; single electron transistors; voltage-controlled oscillators; CMOS technology; SIMON simulator; analytical static model; hybrid SET-MOSFET; orthodox theory; single electron transistor; thermionic current; voltage controlled oscillators; CMOS technology; Circuits; MOSFETs; Optimized production technology; Performance analysis; Semiconductor device modeling; Single electron transistors; Temperature; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on

Conference_Location

Yasmine Hammamet

Print_ISBN

978-1-4244-5090-9

Electronic_ISBN

978-1-4244-5091-6

Type

conf

DOI

10.1109/ICECS.2009.5410886

Filename

5410886