• DocumentCode
    3436160
  • Title

    Progress in computer simulation for ion-solid interaction

  • Author

    Yamamura, Y. ; Kenmotsu, T. ; Yorizane, K. ; Muramoto, T.

  • Author_Institution
    Dept. of Simulation Phys., Okayama Univ., Japan
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    672
  • Abstract
    The theoretical investigation of interactions of ions with solids becomes increasingly popular, using computer simulation. There are two different kinds of computer simulation codes: binary collision approximation (BCA) codes and molecular dynamics (MD) codes. MD codes handle the multiple interactions of a colliding atom with the surrounding target atoms and the interactions between the target atoms. The BCA method saves computing time by introducing physical models properly by describing the ion-solid interaction of interest. BCA codes do not include the many body interaction. The deflection angle, the energy loss, and the time integral are calculated assuming free target atoms. They are successfully applied to ion implantation, channeling, sputtering, ion range and surface scattering. When high-fluence ion beams are bombarded on multicomponent material, near-surface compositional alteration is an unavoidable phenomenon which results from a combination of several kinetic processes and thermal processes. Using the ACAT-DIFFUSE code, we show some simulated results of sputtering and reflection from a ternary alloy, high-temperature sputtering from a Ni-Cu alloy, and depth profiles due to low-energy B ion implantation into an amorphized Si target
  • Keywords
    channelling; energy loss of particles; ion implantation; ion-surface impact; molecular dynamics method; semiconductor doping; sputtering; ACAT-DIFFUSE code; binary collision approximation; channeling; computer simulation; deflection angle; energy loss; free target atoms; high-fluence ion beams; ion implantation; ion range; ion-solid interaction; kinetic processes; many body interaction; molecular dynamics; multicomponent material; multiple interactions; near-surface compositional alteration; sputtering; surface scattering; thermal processes; time integral; Composite materials; Computer simulation; Energy loss; Ion beams; Ion implantation; Physics computing; Scattering; Silicon alloys; Solids; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813756
  • Filename
    813756