DocumentCode :
3436190
Title :
Design and fabrication of a miniature pressure sensor head using direct bonded ultra-thin silicon wafers
Author :
Statler, Chad E. ; Olson, Elizabeth S. ; Farmer, K.R. ; Digges, Thomas G., Jr.
Author_Institution :
Dept. of Appl. Phys., New Jersey Inst. of Technol., Newark, NJ, USA
fYear :
1996
fDate :
11-15 Feb 1996
Firstpage :
239
Lastpage :
243
Abstract :
We have designed and fabricated a miniature pressure sensor head which is formed using an ultrathin silicon wafer (~5 μm thick) directly bonded to an excimer laser micromachined silicon substrate. The fabrication process features numerous advantages over existing pressure sensor construction technology including a maskless procedure and no chemical or mechanical thinning required to form the membrane after bonding. The pressure sensor head forms part of an optically interrogated device with sensitivity to pressures ranging from 0.5 to 4 MPa, but the design pressure range is easily adjusted by changing the membrane thickness or cavity diameter
Keywords :
electric sensing devices; elemental semiconductors; laser beam applications; laser beam machining; microsensors; pressure sensors; semiconductor technology; silicon; substrates; wafer bonding; 0.5 to 4 MPa; 5 mum; Si; bonding; cavity diameter; chemical thinning; direct bonded ultra-thin Si wafers; excimer laser micromachined Si substrate; fabrication; maskless procedure; mechanical thinning; membrane thickness; miniature pressure sensor head; optically interrogated device; ultrathin silicon wafer; Biomembranes; Chemical sensors; Chemical technology; Mechanical sensors; Optical design; Optical device fabrication; Optical devices; Optical sensors; Silicon; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-2985-6
Type :
conf
DOI :
10.1109/MEMSYS.1996.493987
Filename :
493987
Link To Document :
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