DLTS characterization of InAs self-assembled quantum dots

Author

Ilchenko, V.V. ; Lin, S.D. ; Lee, C.P. ; Tretyak, O.V.

Author_Institution

Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2000

fDate

2000

Firstpage

43

Lastpage

48

Abstract

Deep level capacitance transient spectroscopy was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots

Keywords

III-V semiconductors; deep level transient spectroscopy; indium compounds; interface states; self-assembly; semiconductor quantum dots; DLTS characterization; InAs; InAs self-assembled quantum dots; capacitance relaxation signal; capture characteristics; energy level; enhanced resolution; Energy capture; Energy resolution; Energy states; Filling; Gallium arsenide; Quantum capacitance; Quantum dots; Signal detection; Signal resolution; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947126

Filename

947126