Title :
Heavy ion induced etch anisotropy in single crystalline quartz
Author :
Hjort, Klas ; Thornell, Greger ; Spohr, Reimar ; Schweitz, Jan-Åke
Author_Institution :
Div. Mater. Sci., Uppsala Univ., Sweden
Abstract :
Micromachining by ion track etching (MITE) offers a new way to impose an arbitrary etch anisotropy on amorphous and crystalline dielectrics and is demonstrated in single crystalline quartz. The technique can be used to obtain very deep structures with extreme aspect ratios and line widths. At present, depths down to several hundred micrometers with aspect ratios larger than 100 can be obtained. The MITE process has been explored using single crystalline quartz of the AT-cut and Z-cut orientations, using fast heavy ions 197Au and 129Xe (11.6 MeV/u and 11.4 MeV/u, respectively). Complex, three-dimensional quartz structures of 80 μm height with vertical or inclined walls were produced. The and limitations of the process are discussed
Keywords :
ion beam lithography; micromachining; micromechanical devices; particle tracks; piezoelectric materials; quartz; sputter etching; 11.4 MeV; 11.6 MeV; 80 micron; 129Xe ions; 197Au ions; AT-cut; Au; SiO2; Xe; Z-cut; arbitrary etch anisotropy; extreme aspect ratios; heavy ion induced etch anisotropy; inclined walls; latent ion tracks; line widths; micromachining by ion track etching; piezoelectric crystal; single crystalline quartz; three-dimensional quartz structures; undercut; vertical walls; very deep structures; Amorphous materials; Anisotropic magnetoresistance; Crystalline materials; Crystallization; Crystallography; Machining; Micromachining; Particle tracking; Plasma temperature; Wet etching;
Conference_Titel :
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-2985-6
DOI :
10.1109/MEMSYS.1996.493992
