Title :
Influence of high dose low energy ion implantation on dopant depth profile
Author :
Egusa, K. ; Shibahara, K.
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
Abstract :
We investigated As and P depth profiles implanted at very high dose and low energy. Arsenic depth profiles calculated considering sputtering phenomena show good agreement with experimental data. When implantation dose is larger than 1×1016 cm-2, sputtering phenomena cannot be ignored. Implantation energy does not affect so much the effective implantation dose under such a high dose condition. In the case of P+ implantation, experimental results cannot be explained quantitatively by the calculation. This result implies that light atoms such as P should be explained with other dopant loss mechanisms such as backscattering or resputtering
Keywords :
arsenic; doping profiles; elemental semiconductors; ion implantation; phosphorus; semiconductor doping; silicon; sputtering; As depth profiles; P depth profiles; P+ implantation; Si:As; Si:P; backscattering; dopant depth profile; dopant loss mechanisms; high dose low energy ion implantation; implantation energy; resputtering; sputtering phenomena; Atomic measurements; Electronic mail; Equations; Fabrication; Ion implantation; Light scattering; MOSFET circuits; Semiconductor process modeling; Sputter etching; Sputtering;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813769
