Gamma radiation effect on the GaAs solar cell performance

Author

Feteha, M.Y.

Author_Institution

Inst. of Graduate Studies & Res., Alexandria Univ., Egypt

fYear

2000

fDate

2000

Firstpage

91

Lastpage

96

Abstract

Experimental investigation has been carried out to study the effect of gamma radiation (an energetic ⁶⁰Co with photon energy of 1.25 MeV and absorbed dose of up to 380MRAD) on GaAs solar cell performance. P-n junction GaAs cell samples were used for showing the degradation in their performance with the gamma radiation. There is a reduction in short circuit current (I_sc), open circuit voltage (V_oc) and efficiency of 50%, 13.5% and 66% respectively for a dose of 380MRAD. The experimental results for GaAs cell is compared with results published for Si-cells. The C-V characteristic proves that there is a creation for extra recombination centers in case of a cell exposed to gamma radiation

Keywords

III-V semiconductors; capacitance; electron-hole recombination; gallium arsenide; gamma-ray effects; radiation hardening (electronics); semiconductor device measurement; solar cells; 1.25 MeV; C-V characteristic; GaAs; GaAs solar cell performance; absorbed dose; efficiency; gamma radiation effect; open circuit voltage; p-n junction GaAs cell samples; photon energy; recombination centers; short circuit current; Capacitance-voltage characteristics; Circuits; Degradation; Gallium arsenide; Gamma rays; P-n junctions; Photovoltaic cells; Power supplies; Silicon; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947134

Filename

947134