Title :
Gamma radiation effect on the GaAs solar cell performance
Author_Institution :
Inst. of Graduate Studies & Res., Alexandria Univ., Egypt
Abstract :
Experimental investigation has been carried out to study the effect of gamma radiation (an energetic 60Co with photon energy of 1.25 MeV and absorbed dose of up to 380MRAD) on GaAs solar cell performance. P-n junction GaAs cell samples were used for showing the degradation in their performance with the gamma radiation. There is a reduction in short circuit current (Isc), open circuit voltage (Voc) and efficiency of 50%, 13.5% and 66% respectively for a dose of 380MRAD. The experimental results for GaAs cell is compared with results published for Si-cells. The C-V characteristic proves that there is a creation for extra recombination centers in case of a cell exposed to gamma radiation
Keywords :
III-V semiconductors; capacitance; electron-hole recombination; gallium arsenide; gamma-ray effects; radiation hardening (electronics); semiconductor device measurement; solar cells; 1.25 MeV; C-V characteristic; GaAs; GaAs solar cell performance; absorbed dose; efficiency; gamma radiation effect; open circuit voltage; p-n junction GaAs cell samples; photon energy; recombination centers; short circuit current; Capacitance-voltage characteristics; Circuits; Degradation; Gallium arsenide; Gamma rays; P-n junctions; Photovoltaic cells; Power supplies; Silicon; Spontaneous emission;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947134
