• DocumentCode
    3436418
  • Title

    Leakage Power Analysis attacks: Theoretical analysis and impact of variations

  • Author

    Alioto, M. ; Giancane, L. ; Scotti, G. ; Trifiletti, A.

  • Author_Institution
    Dip. di Ing. dell´´Inf., Univ. di Siena, Siena, Italy
  • fYear
    2009
  • fDate
    13-16 Dec. 2009
  • Firstpage
    85
  • Lastpage
    88
  • Abstract
    In this paper, various aspects related to leakage power analysis (LPA) attacks to cryptographic circuits are discussed. These attack aim at recovering the secret key through measurements of chip static (leakage) power, and are a serious threat to the information security of cryptographic circuits in sub-100 nm CMOS technologies. A theoretical analysis of LPA attacks is developed to predict the result of practical attacks. In particular, a closed-form expression is provided for the correlation coefficient between the estimated and measured leakage as a function of the parameters related to the attack. This permits to gain an insight into the fundamental mechanisms involved in LPA attacks. Since LPA attacks are potentially sensitive to threshold voltage variations, the impact of process variations is also analyzed in detail. Results show that LPA attacks are expected to be robust against process variations also in the next process generations. Assumptions and results are finally validated through simulations on a 65-nm CMOS technology and measurements.
  • Keywords
    CMOS integrated circuits; cryptography; integrated circuit design; CMOS technology; chip static power; closed form expression; cryptographic circuits; information security; leakage power analysis attack; secret key; size 65 nm; CMOS technology; Circuits; Closed-form solution; Cryptography; Information security; Particle measurements; Power measurement; Robustness; Semiconductor device measurement; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
  • Conference_Location
    Yasmine Hammamet
  • Print_ISBN
    978-1-4244-5090-9
  • Electronic_ISBN
    978-1-4244-5091-6
  • Type

    conf

  • DOI
    10.1109/ICECS.2009.5410929
  • Filename
    5410929