Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates

Author

Shen, Jeng-Jung ; Kim, Tong-Ho ; Brown, April S. ; Moran, Peter ; Kuech, Thomas F.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2000

fDate

2000

Firstpage

131

Lastpage

135

Abstract

InGaAs/AlInAs HEMT structures have been grown on oxide-bonded InGaAs substrates. De-oxidation and growth conditions are developed that enable good electrical properties. The highest electron mobility obtained was 7258 cm²/V at 300 K. The surface morphology showed undulations. X-ray rocking curve analysis shows differences in lattice constants between the samples grown on control substrates and the oxide-bonded substrates

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; interface structure; lattice constants; molecular beam epitaxial growth; semiconductor device measurement; semiconductor growth; 300 K; InGaAs; InGaAs-AlInAs; InGaAs/AlInAs HEMT structures; MBE; X-ray rocking curve analysis; characterization; control substrates; de-oxidation; electrical properties; electron mobility; growth; growth conditions; lattice constants; oxide-bonded InGaAs substrates; oxide-bonded substrates; surface morphology; undulations; Capacitive sensors; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Plasma temperature; Substrates; Surface morphology; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947142

Filename

947142