Theoretical investigation of gate dielectrics

Author

Demkov, Alexander A. ; Zhang, Xiaodong

Author_Institution

Phys. Sci. Res. Labs., Motorola Inc., Tempe, AZ, USA

fYear

2000

fDate

2000

Firstpage

155

Lastpage

160

Abstract

We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO₂-Si and Si-SiON-SiO₂-Si model metal-oxide-semiconductor (MOS) structures. We use a ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers. We investigate the thermodynamic stability of the SrTiO₃-Si interface, and present the first ab-initio study of the structure and electronic properties of crystalline HfO₂

Keywords

MIS structures; ab initio calculations; dielectric thin films; hafnium compounds; high field effects; interface states; interface structure; leakage currents; silicon; silicon compounds; strontium compounds; thermal stability; HfO₂; MOS structures; Si-SiO₂-Si; Si-SiON-SiO₂-Si; Si-dielectric interface; SrTiO₃-Si; SrTiO₃-Si interface; ab-initio study; ballistic transport approach; crystalline HfO₂; gate dielectrics; low bias leakage; realistic structural models; theoretical methodology; thermodynamic stability; ultrathin dielectric layers; Crystallization; Dielectric constant; Dielectric materials; Dielectrics and electrical insulation; High-K gate dielectrics; Lattices; Plasma measurements; Solids; Thermal stability; Thermodynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947146

Filename

947146