Full bandstructure modeling of quantum well infrared photodetectors

Author

Yang, Hua ; Frensley, William R.

Author_Institution

Texas Univ., Dallas, TX, USA

fYear

2000

fDate

2000

Firstpage

167

Lastpage

172

Abstract

Full bandstructure modeling of quantum well infrared photodetectors is presented. This model includes the effects from the non-parabolic bandstructure, which is described by a tight-binding model. The quantum transmitting boundary method and retarded Green function are used to determine the bound states and quasi-bound state in the quantum well. Analytic and numerical methods are employed to resolve the density of bound and continuum states. The momentum matrix elements are extracted by comparing with a k·p model. Several samples with different quantum well structures are studied. The peak wavelength of the spectrum predicted by this model shows a good agreement with the experimental data

Keywords

Green´s function methods; band structure; bound states; infrared detectors; numerical analysis; photodetectors; quantum well devices; semiconductor device models; tight-binding calculations; analytic method; bound states; continuum states; full bandstructure modeling; k·p model; momentum matrix elements; numerical method; peak wavelength; quantum transmitting boundary method; quantum well infrared photodetectors; quasi-bound state; retarded Green function; tight-binding model; Data mining; Eigenvalues and eigenfunctions; Electromagnetic wave absorption; Green function; Infrared spectra; Photodetectors; Predictive models; Quantum computing; Quantum mechanics; Schrodinger equation;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947148

Filename

947148