DocumentCode :
3436697
Title :
Full bandstructure modeling of quantum well infrared photodetectors
Author :
Yang, Hua ; Frensley, William R.
Author_Institution :
Texas Univ., Dallas, TX, USA
fYear :
2000
fDate :
2000
Firstpage :
167
Lastpage :
172
Abstract :
Full bandstructure modeling of quantum well infrared photodetectors is presented. This model includes the effects from the non-parabolic bandstructure, which is described by a tight-binding model. The quantum transmitting boundary method and retarded Green function are used to determine the bound states and quasi-bound state in the quantum well. Analytic and numerical methods are employed to resolve the density of bound and continuum states. The momentum matrix elements are extracted by comparing with a k·p model. Several samples with different quantum well structures are studied. The peak wavelength of the spectrum predicted by this model shows a good agreement with the experimental data
Keywords :
Green´s function methods; band structure; bound states; infrared detectors; numerical analysis; photodetectors; quantum well devices; semiconductor device models; tight-binding calculations; analytic method; bound states; continuum states; full bandstructure modeling; k·p model; momentum matrix elements; numerical method; peak wavelength; quantum transmitting boundary method; quantum well infrared photodetectors; quasi-bound state; retarded Green function; tight-binding model; Data mining; Eigenvalues and eigenfunctions; Electromagnetic wave absorption; Green function; Infrared spectra; Photodetectors; Predictive models; Quantum computing; Quantum mechanics; Schrodinger equation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
Type :
conf
DOI :
10.1109/ISCS.2000.947148
Filename :
947148
Link To Document :
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