Title :
A 3.1-10.6 GHz RF CMOS circuits monolithically integrated with dipole antenna
Author :
Ikebe, Masayuki ; Ueo, Daisuke ; Takahagi, Kazuhiro ; Ohuno, Masaki ; Takada, Yusuke ; Sano, Eiichi
Author_Institution :
Hokkaido Univ., Sapporo, Japan
Abstract :
Transmitter, receiver antennas, and other components monolithically integrated with CMOS LSIs are in high demand as a means of reducing the cost of wireless equipment. For the first step, an RF frontend (low-noise-amplifier [LNA] and mixer) has been designed for use in the 3.1 to 10.6-GHz band compatible with multi-band OFDM UWB all group spectrum allocation. We clarify the design methodology of antennas on lossy Si substrates. The RF circuits with the antenna were fabricated using a 0.18-¿m CMOS process. Measured total gain with 50-cm air interface is about -40 dB in the above band.
Keywords :
CMOS integrated circuits; OFDM modulation; dipole antennas; microwave antennas; receiving antennas; transmitting antennas; ultra wideband antennas; CMOS LSI; CMOS circuits monolithically integrated; Transmitter, antennas; dipole antenna; frequency 3.1 GHz to 10.6 GHz; low-noise-amplifier; multiband OFDM UWB; receiver antennas; Antenna accessories; Circuits; Costs; Design methodology; Dipole antennas; OFDM; Radio frequency; Receiving antennas; Transmitters; Transmitting antennas;
Conference_Titel :
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4244-5090-9
Electronic_ISBN :
978-1-4244-5091-6
DOI :
10.1109/ICECS.2009.5410942
