Title :
Improvement of GaInNAs/GaAs quantum wells by optimizing growth rate in MOCVD
Author :
Kawaguchi, Masao ; Miyamoto, Tomoyuki ; Gouardes, Eric ; Schlenker, Dietmar ; Kondo, Takashi ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We investigated the crystal quality dependence of GaInNAs/GaAs quantum wells (QWs) on the growth rate for metalorganic chemical vapor deposition (MOCVD). GaInNAs QWs were grown under different growth rates of 0.15, 0.2, 0.6 and 1 μm/h. At a growth rate of 0.2 μm/h, GaInNAs QWs showed the smallest degradation on photoluminescence (PL) for elongating the wavelength by increasing nitrogen (N) composition. GaInNAs QW stripe lasers, which employ a GaInNAs double QWs (DQWs) active layer grown at the optimized growth rate, exhibits a threshold current density of 340 A/cm2, which is the lowest for MOCVD grown GaInNAs lasers ever reported
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; nitrogen compounds; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; GaInNAs QW stripe lasers; GaInNAs double QW active layer; GaInNAs-GaAs; GaInNAs/GaAs quantum wells; MOCVD; crystal quality; growth rate optimization; metalorganic chemical vapor deposition; photoluminescence; threshold current density; Gallium arsenide; Inductors; MOCVD; Molecular beam epitaxial growth; Optical buffering; Optical diffraction; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; X-ray diffraction;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947157
