Title :
Epitaxial growth of heterostructures based on InAsPSb and GaInAsPSb isoperiodical with GaSb
Author :
Vasil´ev, V.I. ; Kuchinskii, V.I. ; Nikitina, I.P. ; Akhmedov, D. ; Smirnov, V.M. ; Vasukov, D.A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Quaternary InAsyPzSb1-y-z and pentanary Ga1-xInxAsyPzSb 1-y-z solid solutions isoperiodical with GaSb were grown on GaSb (100) substrates by liquid phase epitaxy (LPE) in 0.02⩽z⩽0.1 and 0.91⩽x⩽0.97; 0.04⩽z⩽0.1 composition ranges respectively. The growth temperature was in the 570-605°C range. Crystalline and photoluminescence (PL) properties of obtained epilayers were investigated. PL intensity of pentanary solid solutions (PSS) is considerably higher, than that of obtained earlier quaternary GaInAsSb with close values of bandgap Eg
Keywords :
III-V semiconductors; gallium compounds; indium compounds; liquid phase epitaxial growth; optical films; optical materials; photoluminescence; semiconductor epitaxial layers; solid solutions; spectral line intensity; 570 to 605 degC; GaInAsSb; GaSb; GaSb-GaInAsSbP; GaSb-InAsSbP; LPE growth; PL intensity; growth temperature; liquid phase epitaxy; pentanary GaInAsPSb; pentanary solid solutions; photoluminescence; quaternary InAsPSb; semiconductor heterostructures; solid solutions; Boats; Crystallization; Epitaxial growth; III-V semiconductor materials; Indium phosphide; Photodetectors; Photoluminescence; Solids; Substrates; Temperature distribution;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947160
