Observation of exciton-LO-phonon scattering suppression in a high-quality AlGaAs/GaAs quantum wire

Author

Wang, Xue-Lun ; Ogura, Mutsuo

Author_Institution

Electrotech. Lab., Tsukuba, Japan

fYear

2000

fDate

2000

Firstpage

263

Lastpage

266

Abstract

Exciton-LO-phonon scattering in a high-quality V-shaped AlGaAs/GaAs quantum wire grown by flow rate modulation epitaxy is investigated using temperature dependent photoluminescence excitation spectroscopy (PLE). The linewidth of the ground state PLE peak is found to be almost independent of temperature at least up to 250 K, indicating a drastic suppression of the exciton-LO-phonon scattering in QWRs. The Coulomb field-induced reduction of oscillator strength in the continuum is considered as an important reason responsible for the observed exciton-LO-phonon scattering suppression

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; ground states; interface phonons; interface states; oscillator strengths; phonon-exciton interactions; photoluminescence; semiconductor quantum wires; spectral line breadth; 250 K; AlGaAs-GaAs; Coulomb field-induced reduction; QWRs; continuum; exciton-LO-phonon scattering suppression; flow rate modulation epitaxy; ground state PLE peak; high-quality AlGaAs/GaAs quantum wire; high-quality V-shaped AlGaAs/GaAs quantum wire; linewidth; oscillator strength; temperature dependent photoluminescence excitation spectroscopy; Epitaxial growth; Gallium arsenide; Land surface temperature; Oscillators; Particle scattering; Photoluminescence; Spectroscopy; Stationary state; Temperature dependence; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947166

Filename

947166