Accurate reliability evaluation of non-uniform ultrathin oxynitride and high-k layers

Author

Roussel, Philippe ; Degraeve, Robin ; Kerber, Andreas ; Pantisano, Luigi ; Groeseneken, Guido

Author_Institution

IMEC, Leuven, Belgium

fYear

2003

fDate

30 March-4 April 2003

Firstpage

29

Lastpage

33

Abstract

We present a methodology to separate the t_BD-spread caused by wafer non-uniformity from the inherent spread due to the physical breakdown mechanism. The method relies on the area scaling effect and consists of two steps: first the distribution slope is fitted using the entire data set, then the 63%-values are determined at each wafer location. This method is demonstrated to correctly evaluate the reliability of ultra-thin SiO₂, oxynitride and high-k dielectrics.

Keywords

MIS devices; Weibull distribution; alumina; dielectric thin films; maximum likelihood estimation; semiconductor device breakdown; semiconductor device reliability; silicon compounds; 63%-values; SiO₂-Al₂O₃-TiN; SiON; Weibull parameter pairs; area scaling effect; distribution slope; maximum likelihood values; nonuniform ultrathin high-k layers; nonuniform ultrathin oxynitride layers; physical breakdown mechanism; reliability prediction; ultra-thin SiO₂; wafer nonuniformity; Area measurement; Dielectric breakdown; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Physics; Plasmas; Position measurement; Q measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Print_ISBN

0-7803-7649-8

Type

conf

DOI

10.1109/RELPHY.2003.1197716

Filename

1197716