Title :
A switched-capacitor CMOS voltage reference for ultra low-voltage and ultra low-power operation
Author :
Qu, Zihua ; Zhang, Meng ; Wu, Jianhui
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
An ultra low-voltage and low-power CMOS voltage reference using subthreshold, body effect and switched-capacitor techniques is proposed in this paper. No resistor and BJT is used in this structure. The proposed circuit has been simulated with Chartered 0.18-¿m CMOS process. The simulated results show that the voltage reference can operate with sub-0.6V supply and total supply current is 210nA at 0.58V supply. The temperature coefficient of 7.67ppm/°C for a temperature range of -40°C to 85°C is achieved. The layout area is only 0.018 mm2.
Keywords :
CMOS integrated circuits; circuit simulation; low-power electronics; switched capacitor networks; CMOS voltage reference; Chartered CMOS process; size 0.18 mum; switched capacitor; temperature -40 degC to 85 degC; ultra low-power operation; ultra low-voltage power operation; voltage 0.58 V; CMOS process; CMOS technology; Circuit simulation; Low voltage; MOSFETs; Resistors; Switched capacitor circuits; Switching circuits; Temperature distribution; Threshold voltage;
Conference_Titel :
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4244-5090-9
Electronic_ISBN :
978-1-4244-5091-6
DOI :
10.1109/ICECS.2009.5410964
