DocumentCode
3437212
Title
Contribution of device simulation to SER understandfng
Author
Palau, J.-M. ; Calvet, M.-C. ; Dodd, P.E. ; Sexton, F.W. ; Roche, Ph.
Author_Institution
CEM2, Univ. de Montpellier II, France
fYear
2003
fDate
30 March-4 April 2003
Firstpage
71
Lastpage
75
Abstract
A summary is presented of recent works and new developments on device simulation of particle-induced upsets in SRAM memories. Upsets are assumed to be due to ionizing recoil products of nuclear reactions with atmospheric neutrons. The goal here is to enable predictive soft error rate (SER) calculations and deal with the probabilistic aspect of these events.
Keywords
CMOS memory circuits; SRAM chips; error statistics; integrated circuit reliability; neutron effects; semiconductor device models; Monte Carlo Dasie; SER calculation methods; SRAM memories; atmospheric neutrons; device simulation; ionizing recoil products; nuclear reactions; particle-induced upsets; probabilistic aspect; soft error rate calculations; Aircraft; Atmospheric modeling; Charge carrier processes; Error analysis; Insulation life; Ion sources; Laboratories; Neutrons; Random access memory; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Print_ISBN
0-7803-7649-8
Type
conf
DOI
10.1109/RELPHY.2003.1197723
Filename
1197723
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