The effect of GaP in Al-free, GaAs-based resonant tunnelling diodes

Author

Wernersson, Lars-Erik ; Gustafson, B. ; Gustafsson, A. ; Borgstrom, M. ; Pietzonka, I. ; Pistol, M.-E. ; Sass, T. ; Seifert, W.

Author_Institution

Dept. of Solid State Phys., Lund Univ., Sweden

fYear

2000

fDate

2000

Firstpage

309

Lastpage

314

Abstract

We have studied the role of GaP intermediate layers in GaInP/GaAs double barrier resonant tunnelling structures. Measurements of the current-voltage characteristics show an asymmetric behaviour which was improved in diodes including thicker GaP intermediate layers. From cross-sectional transmission electron microscopy investigations we have observed a fluctuation in the thickness of the GaP layers at the GaInP to GaAs transition to which we attribute the asymmetric characteristics. Finally, we demonstrate a simplified structure using only GaP layers as barriers. These new diodes show more symmetric I-V characteristics than the GaInP/GaAs tunnelling diodes

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; interface states; interface structure; resonant tunnelling diodes; GaAs-based resonant tunnelling diodes; GaInP-GaP-GaAs; GaInP/GaAs double barrier resonant tunnelling structures; GaP; GaP intermediate layers; asymmetric behaviour; cross-sectional transmission electron microscopy; current-voltage characteristics; Chemicals; Current measurement; Diodes; Electrons; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gold; Resonant tunneling devices; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947174

Filename

947174