DocumentCode
3437234
Title
Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell
Author
Shima, Masashi ; Sakuma, Yoshiki ; Sugiyama, Yoshihiro ; Awano, Yuji ; Yokoyama, Naoki
Author_Institution
Fujitsu Ltd., Atsugi, Japan
fYear
2000
fDate
2000
Firstpage
315
Lastpage
319
Abstract
Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gate were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories
Keywords
field effect transistors; integrated optoelectronics; optical modulation; optical storage; semiconductor quantum dots; high-density optoelectronic memories; optical modulation; optical writing; single floating quantum dot gate; stored charges; tetrahedral-shaped recess field-effect transistor memory cell; Electrodes; Etching; FETs; Gallium arsenide; Nonvolatile memory; Optical modulation; Quantum dots; Substrates; US Department of Transportation; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-7803-6258-6
Type
conf
DOI
10.1109/ISCS.2000.947175
Filename
947175
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