Vapor phase synthesis of polycrystalline II-VI semiconductor nanoparticles in a counterflow jet reactor

Author

Sarigiannis, D. ; Mountziaris, T.J. ; Kioseoglou, G. ; Petrou, A.

Author_Institution

Dept. of Chem. Eng., State Univ. of New York, Buffalo, NY, USA

fYear

2000

fDate

2000

Firstpage

321

Lastpage

326

Abstract

This paper addresses the vapor-phase synthesis of polycrystalline ZnSe nanoparticles. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and collected by impact on a silicon wafer. The precursors used in this study were vapors of (CH₃)₂Zn:[N(C₂H₅)₃]₃ and H₂Se gas diluted in hydrogen. These precursors have been used in the past for metalorganic vapor phase epitaxy (MOVPE) of ZnSe thin films. Transmission electron microscopy (TEM), electron diffraction, and Raman spectroscopy were used to characterize the particles. The reactor was operated in a continuous, steady-state mode using a gas delivery system that is typical for MOVPE systems

Keywords

II-VI semiconductors; Raman spectra; electron diffraction; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; vapour phase epitaxial growth; zinc compounds; 125 torr; 293 to 298 K; MOVPE; Raman spectroscopy; TEM; ZnSe; counterflow jet reactor; electron diffraction; polycrystalline II-VI semiconductor nanoparticles; steady-state mode; thin films; vapor-phase synthesis; Electrons; Epitaxial growth; Epitaxial layers; Hydrogen; Inductors; Nanoparticles; Silicon; Temperature; Transistors; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947176

Filename

947176