Title :
Effective length of high-field region in InGaAs-based lattice-matched HEMTs
Author :
Shigekawa, Naoteru ; Suemitsu, Tetsuya ; Umeda, Yohtaro
Author_Institution :
NTT Sci. & Core Technol. Lab. Group, Kanagawa, Japan
Abstract :
We analyzed the bias-voltage dependence of the 1/f like drain-noise current of highly biased InGaAs-based lattice-matched HEMTs and evaluated the effective length of the high-field region at the drain edge of the device. We found that the effective length was between the nominal barrier thickness and the estimated lateral extension of side-etched region, and that the effective length increased when the gate bias voltage was decreased. This work is likely to provide a semi-quantitative method for determining experimentally the effective length of the high-field region of these HEMTs
Keywords :
1/f noise; III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device breakdown; semiconductor device noise; 1/f like drain-noise current; InGaAs; barrier thickness; bias-voltage dependence; effective length; gate bias voltage; high-field region; lattice-matched HEMT; Current measurement; Density measurement; Electric breakdown; Frequency measurement; HEMTs; Indium gallium arsenide; Laboratories; MODFETs; Photonics; Voltage;
Conference_Titel :
Compound Semiconductors, 2000 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-6258-6
DOI :
10.1109/ISCS.2000.947178
