Effective length of high-field region in InGaAs-based lattice-matched HEMTs

Author

Shigekawa, Naoteru ; Suemitsu, Tetsuya ; Umeda, Yohtaro

Author_Institution

NTT Sci. & Core Technol. Lab. Group, Kanagawa, Japan

fYear

2000

fDate

2000

Firstpage

333

Lastpage

338

Abstract

We analyzed the bias-voltage dependence of the 1/f like drain-noise current of highly biased InGaAs-based lattice-matched HEMTs and evaluated the effective length of the high-field region at the drain edge of the device. We found that the effective length was between the nominal barrier thickness and the estimated lateral extension of side-etched region, and that the effective length increased when the gate bias voltage was decreased. This work is likely to provide a semi-quantitative method for determining experimentally the effective length of the high-field region of these HEMTs

Keywords

1/f noise; III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device breakdown; semiconductor device noise; 1/f like drain-noise current; InGaAs; barrier thickness; bias-voltage dependence; effective length; gate bias voltage; high-field region; lattice-matched HEMT; Current measurement; Density measurement; Electric breakdown; Frequency measurement; HEMTs; Indium gallium arsenide; Laboratories; MODFETs; Photonics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947178

Filename

947178